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V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Document Number: 89010
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.455 V at I
F
= 5 A
FEATURES
? Trench MOS Schottky technology
Low forward voltage drop, low power
losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
100 V
IFSM
160 A
VF at IF
= 15 A 0.63 V
TJ
max. 150 °C
TO-220AB
V30100C VF30100C1
32
2
3
1
K
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
VI30100C
VB30100C
TMBS?
ITO-220AB
3
1
2
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100C VF30100C VB30100C VI30100C UNIT
Maximum repetitive peak reverse voltage VRRM
100 V
Maximum average forward rectified current (fig. 1)
per device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
160 A
Non-repetitive avalanche energy
at TJ
= 25 °C, L = 60 mH per diode
EAS
210 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
TJ
= 38 °C ± 2 °C per diode
IRRM
1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
Operating junction and storage temperature range TJ, TSTG
- 40 to + 150 °C
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